Sfoglia per Rivista SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Ion-implanted normally-off GaAs bipolar-mode FET (BMFET) for application in a wide temperature range
1996-01-01 Cocorullo, Giuseppe; Hartnagel, Hl; Schweeger, G.
Low-frequency noise assessment of border traps in Al2O3 capped DRAM peripheral MOSFETs
2014-01-01 Simoen, E; Federico, A; Aoulaiche, M; Ritzenthaler, R; Schram, T; Arimura, H; Cho, M; Kauerauf, T; Groeseneken, G; Horiguchi, N; Thean, A; Crupi, Felice; Spessot, A; Caillat, C; Fazan, P; Na, H. J.; Son, Y; Noh, Kb
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
Ion-implanted normally-off GaAs bipolar-mode FET (BMFET) for application in a wide temperature range | 1-gen-1996 | Cocorullo, Giuseppe; Hartnagel, Hl; Schweeger, G. | |
Low-frequency noise assessment of border traps in Al2O3 capped DRAM peripheral MOSFETs | 1-gen-2014 | Simoen, E; Federico, A; Aoulaiche, M; Ritzenthaler, R; Schram, T; Arimura, H; Cho, M; Kauerauf, T; Groeseneken, G; Horiguchi, N; Thean, A; Crupi, Felice; Spessot, A; Caillat, C; Fazan, P; Na, H. J.; Son, Y; Noh, Kb |
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