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Titolo Data di pubblicazione Autore(i) File
MAXIMUM ENTROPY PRINCIPLE IN RELATIVISTIC RADIATION HYDRODYNAMICS 1-gen-1997 Mascali, Giovanni; Romano, V.
An extended fluid-dynamical model describing electron transport in semiconductors 1-gen-2000 Mascali, Giovanni; Trovato, M.
A BGK TYPE APPROXIMATION FOR THE COLLISION OPERATOR OF THE TRANSPORT EQUATION FOR SEMICONDUCTORS 1-gen-2000 Mascali, Giovanni
THEORETICAL FOUNDATION FOR TAIL ELECTRON HYDRODINAMICAL MODELS IN SEMICONDUCTORS 1-gen-2001 A. M., Anile; Mascali, Giovanni
TWO DIMENSIONAL MESFET SIMULATION OF TRANSIENT AND STEADY STATES WITH KINETIC BASED HYDRODYNAMICAL MODELS 1-gen-2001 Anile, A. M.; Liotta, S. F.; Mascali, Giovanni; Rinaudo, S.
Compton Cooling of a Radiating Fluid 1-gen-2001 Mascali, Giovanni
HIGH FIELD CLOSURES FOR HYDRODYNAMICAL MODELS FOR THE TRANSPORT OF CHARGE CARRIERS IN SEMICONDUCTORS 1-gen-2001 Anile, A. M.; Liotta, S. F.; Mascali, Giovanni
Non-parabolic tail hydrodynamical model for silicon semiconductors 1-gen-2002 Anile, A. M.; Mascali, Giovanni
MAXIMUM ENTROPY PRINCIPLE IN RELATIVISTIC RADIATION HYDRODYNAMICS II: COMPTON AND DOUBLE COMPTON EFFECT 1-gen-2002 Mascali, Giovanni
HYDRODYNAMICAL MODEL OF CHARGE TRANSPORT IN GA-AS BASED ON THE MAXIMUM ENTROPY PRINCIPLE 1-gen-2002 Mascali, Giovanni; Romano, V.
NON-LINEAR DETERMINATION OF THE DISTRIBUTION FUNCTION OF DEGENERATE GASES WITH AN APPLICATION TO SEMICONDUCTORS 1-gen-2002 Mascali, Giovanni; Trovato, M.
Maximum Entropy Hydrodynamical model for GaAs Semiconductors with Applications to electronic Devices 1-gen-2003 Anile, A. M.; Mascali, Giovanni; Romano, V.
Mobility in GaAs semiconductors 1-gen-2003 Mascali, Giovanni
RECENT DEVELOPMENTS IN HYDRODYNAMICAL MODELING OF SEMICONDUCTORS 1-gen-2003 Anile, A. M.; Mascali, Giovanni; Romano, V.
A two population model for electron transport in Si 1-gen-2003 Anile, A. M.; Mascali, Giovanni
New Perspectives on the mathematical modeling of semiconductors 1-gen-2005 Mascali, Giovanni; Ali', G; Anile, A. M.
Perspectives in semiconductor device simulation 1-gen-2005 Ali', Giuseppe; Anile, A. M.; Mascali, Giovanni
MEP PARABOLIC HYDRODYNAMICAL MODEL FOR HOLES IN SILICON SEMICONDUCTORS 1-gen-2005 Mascali, Giovanni; Romano, V; Sellier, J. M.
SI AND GAAS MOBILITY DERIVED FROM A HYDRODYNAMICAL MODEL FOR SEMICONDUCTORS BASED ON THE MAXIMUM ENTROPY PRINCIPLE 1-gen-2005 Mascali, Giovanni; Romano, V.
SIMULATION OF GUNN OSCILLATIONS WITH A NON-PARABOLIC HYDRODYNAMICAL MODEL BASED ON THE MAXIMUM ENTROPY PRINCIPLE 1-gen-2005 Mascali, Giovanni; Romano, V.
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