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A new physically-based model for temperature acceleration of time-to-breakdown 1-gen-1998 Pangon, N; Degraeve, R; Roussel, P; Groeseneken, G; Maes, He; Crupi, Felice
PC based low noise measurement system for the characterization of ultra thin oxide MOS devices 1-gen-1998 Basso, G; Ciuti, V; Crupi, Felice; Giannetti, R; Neri, B.
A model for current conduction after soft-breakdown 1-gen-1998 Nigam, T; Crupi, Felice; Degraeve, R; Heyns, M; Groeseneken, G; Maes, He
Characteristics and Correlated Fluctuations of the Gate and Substrate Current after Oxide soft-Breakdown 1-gen-1998 Crupi, Felice; Degraeve, R; Groeseneken, G; Nigam, T; Maes, He
Electrical and thermal transient during dielectric breakdown of thin oxides in metal-SiO2-silicon capacitors 1-gen-1998 Lombardo, S; Crupi, Felice; La Magna, A; Spinella, C; Terrasi, A; La Mantia, A; Neri, B.
On the properties of the gate and substrate current after soft breakdown in ultrathin oxide layers 1-gen-1998 Crupi, Felice; Degraeve, R; Groeseneken, G; Nigam, T; Maes, He
Origin of the substrate current after soft-breakdown in thin oxide nMOSFETs 1-gen-1999 Crupi, Felice; Iannaccone, G; Neri, B; Crupi, I; Degraeve, R; Groeseneken, G; Maes, He
A novel characterization tool for the study of dielectric breakdown of ultra-thin oxide MOS structures 1-gen-1999 Basso, G; Crupi, Felice; Neri, B; Giannetti, R; Lombardo, S.
Investigation and comparison of the noise in the gate and substrate current after soft-breakdown 1-gen-1999 Crupi, Felice; Degraeve, R; Groeseneken, G; Nigam, T; Maes, H.
Transients during pre-breakdown and hard breakdown of thin gate oxides in metal-SiO2-Si capacitors 1-gen-1999 Lombardo, S; Crupi, Felice; Spinella, C; Neri, B.
Degradation and hard breakdown transient of thin gate oxides in metal-SiO2-Si capacitors: Dependence on oxide thickness 1-gen-1999 Lombardo, S; La Magna, A; Spinella, C; Gerardi, C; Crupi, Felice
Soft breakdown of gate oxides in metal-SiO2-Si capacitors under stress with hot electrons 1-gen-1999 Lombardo, S; La Magna, A; Gerardi, C; Alessandri, M; Crupi, Felice
A detailed analysis of the pre-breakdown current fluctuations in thin oxide MOS capacitors 1-gen-1999 Neri, B; Crupi, Felice; Basso, G; Lombardo, S.
On-off fluctuations of the tunnel current before breakdown of thin oxide MOS devices 1-gen-2000 Crupi, Felice; Neri, B; Lombardo, S.
Short noise partial suppression in the SILC regime 1-gen-2000 Crupi, Felice; Iannaccone, G; Neri, B; Ciofi, C; Lombardo, S.
Pre-breakdown in thin SiO2 films 1-gen-2000 Crupi, Felice; Neri, B; Lombardo, S.
Suppressed shot noise in trap-assisted tunneling of metal-oxide-semiconductor capacitors 1-gen-2000 Iannaccone, G; Crupi, Felice; Neri, B; Lombardo, S.
Current noise at the oxide hard-breakdown 1-gen-2001 Crupi, Felice; Ciofi, C; Iannaccone, G; Neri, B; Lombardo, S.
Softening of breakdown in ultra-thin gate oxide nMOSFETs at low inversion layer density 1-gen-2001 Lombardo, S; Crupi, Felice; Stathis, Jh
A new method for high sensitivity noise measurements 1-gen-2001 Ciofi, C.; Crupi, Felice; Pace, Calogero
Mostrati risultati da 1 a 20 di 255
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