The impact of a submonolayer of HfO2 sandwiched between the SiON gate dielectric and the polycrystalline silicon layer on the low frequency noise of a n-channel metal oxide semiconductor field effect transistor is investigated. Fermi-level pinning at polycrystalline silicon-HfO2 interface acts as a dramatic source of the drain noise due to charge carrier number fluctuations, and of the gate noise due to work function fluctuations. These 1/f noise measurements are a strong indicator that the defects at the top HfO2/polycrystalline silicon interface, rather than bulk defects in the high-k layer, are responsible for the noise degradation observed in HfO2 gate dielectrics.
The impact of a submonolayer of HfO2 sandwiched between the SiON gate dielectric and the polycrystalline silicon layer on the low frequency noise of a n-channel metal oxide semiconductor field effect transistor is investigated. Fermi-level pinning at polycrystalline silicon-HfO2 interface acts as a dramatic source of the drain noise due to charge carrier number fluctuations, and of the gate noise due to work function fluctuations. These 1/f noise measurements are a strong indicator that the defects at the top HfO2/polycrystalline silicon interface, rather than bulk defects in the high-k layer, are responsible for the noise degradation observed in HfO2 gate dielectrics. (c) 2007 American Institute of Physics.
Fermi-level pinning at polycrystalline silicon-HfO2 interface as a source of drain and gate current 1/f noise
CRUPI, Felice;PACE, Calogero
2007-01-01
Abstract
The impact of a submonolayer of HfO2 sandwiched between the SiON gate dielectric and the polycrystalline silicon layer on the low frequency noise of a n-channel metal oxide semiconductor field effect transistor is investigated. Fermi-level pinning at polycrystalline silicon-HfO2 interface acts as a dramatic source of the drain noise due to charge carrier number fluctuations, and of the gate noise due to work function fluctuations. These 1/f noise measurements are a strong indicator that the defects at the top HfO2/polycrystalline silicon interface, rather than bulk defects in the high-k layer, are responsible for the noise degradation observed in HfO2 gate dielectrics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.