We have investigated the intrinsic dielectric breakdown of gate oxide layers with thickness of 12 and 7 nm in n(+) polycrystalline Si-SiO2-Si metal/oxide/semiconductor (MOS) capacitors after stress with constant current either under Fowler-Nordheim or under hot electron injection. Occurrence of soft breakdown without thermal damage in the MOS structure is demonstrated even in a 12 nm oxide under particular stress conditions. In general, it is found that the type of stress determines the breakdown mode (soft or hard). (C) 1999 American Institute of Physics. [S0003-6951(99)01834-3].

Soft breakdown of gate oxides in metal-SiO2-Si capacitors under stress with hot electrons

CRUPI, Felice
1999-01-01

Abstract

We have investigated the intrinsic dielectric breakdown of gate oxide layers with thickness of 12 and 7 nm in n(+) polycrystalline Si-SiO2-Si metal/oxide/semiconductor (MOS) capacitors after stress with constant current either under Fowler-Nordheim or under hot electron injection. Occurrence of soft breakdown without thermal damage in the MOS structure is demonstrated even in a 12 nm oxide under particular stress conditions. In general, it is found that the type of stress determines the breakdown mode (soft or hard). (C) 1999 American Institute of Physics. [S0003-6951(99)01834-3].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11770/157909
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