Sfoglia per Rivista  IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

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1/f Noise in Drain and Gate Current of MOSFETs With High-k Gate Stacks 1-gen-2009 Magnone, P; Crupi, Felice; Giusi, G; Pace, Calogero; Simoen, E; Claeys, C; Pantisano, L; Maji, D; Rao, Vr; Srinivasan, P.
A comparative study of the oxide breakdown in short-channel nMOSFETs and pMOSFETs stressed in inversion and in accumulation regimes 1-gen-2003 Crupi, Felice; Kaczer, B; Degraeve, R; De Keersgieter, A; Groeseneken, G.
A Defect-Centric Analysis of the Temperature Dependence of the Channel Hot Carrier Degradation in nMOSFETs 1-gen-2016 Procel, Lm; Crupi, Felice; Trojman, L; Franco, J; Kaczer, B.
Impact of the Substrate Orientation on CHC Reliability in n-FinFETs – Separation of the Various Contributions 1-gen-2014 Tallarico, An; Cho, M; Franco, J; Ritzenthaler, R; Togo, M; Horiguchi, N; Groeseneken, G; Crupi, Felice
Implications of the Incremental Pulse and Verify Algorithm on the Forming and Switching Distributions in RERAM Arrays 1-gen-2016 Crupi, Felice; Filice, F; Grossi, A; Zambelli, C; Olivo, P; Perez, E; Wenger, C.
Single Defect Discharge Events in Vertical-Nanowire Tunnel-FETs 1-gen-2017 Fiore, A; Franco, J; Cho, M; Crupi, Felice; Strangio, S; Roussel, Phj; Rooyackers, R; Colvert, N; Linten, D.
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