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Summary Abstract: CoSi2 Diffusion Barrier Modulation of Au/Si(111) Interface Reaction 1-gen-1988 Aldao, Cm; Xu, Fang; Vitomirov, Im; Weaver, Jh
Atomic Distribution Across Metal-III-V-Compound-Semiconductor Interfaces 1-gen-1988 Hill, Dm; Xu, Fang; Lin, Z; Weaver, Jh
Temperature Dependent Reaction and Atomic Redistribution for Ti/GaAs (100) Interfaces 1-gen-1988 Xu, Fang; Hill, Dm; Lin, Z; Anderson, Sg; Shapira, Y; Weaver, Jh
3d Transition Metals on InP(110): A Comparative Study of Reactive Interface Evolution 1-gen-1988 Aldao, Cm; Vitomirov, Im; Xu, Fang; Weaver, Jh
Band Gap Discontinuities at Ge/ZnSe(100) and Si/ZnSe (100) 1-gen-1988 Xu, Fang; Vos, M; Sullivan, J; Atanasosca, Lj; Anderson, Sg; Weaver, Jh
Interface Dipole, Surface Work Function and Schottky Barrier Formation at Evolving Au/ZnSe (100) Interface 1-gen-1988 Xu, Fang; Vos, M; Weaver, Jh; Cheng, H.
Summary Abstract: X-Ray Photoelectron Spectroscopy Measurements of Kinetic Parameters at Elevated Temperature for Ge/Si (111)-7x7 Heterojunction Formation 1-gen-1988 Hill, Dm; Xu, Fang; Lin, Z; Weaver, Jh
Summary Abstract: Direct Evidence of the Onset of In Surface Segregation for Co/InP (110) 1-gen-1988 Vitomirov, Im; Xu, Fang; Aldao, Cm; Weaver, Jh
Direct Evidence of Doppler Shift in 10 keV Ar+ Ion Induced Si Auger Emission 1-gen-1989 Xu, Fang; Siciliano, R; Camarca, M; Oliva, A.
Photoemission Studies of Interface Chemistry and Schottky Barriers for ZnSe(100) with Ti, Co, Cu, Pd, Ag, Ce, and Al 1-gen-1989 Vos, M; Xu, Fang; Anderson, Sg; Weaver, Jh; Cheng, H.
Influence of Au Overlayers on Valence Band Offsets for Buried CaF2/Si(111) Interfaces 1-gen-1989 Xu, Fang; Vos, M; Weaver, Jh
Schottky Barrier Formation and Atomic Mixing at Au/ZnSe (100) and Co/ZnSe (100) Interfaces with Co and Au Interlayers 1-gen-1989 Anderson, Sg; Xu, Fang; Vos, M; Weaver, Jh; Cheng, H.
Metal/CaF2/Si Heterostructure: Interface Evolution and Electronic Properties 1-gen-1989 Vos, M; Xu, Fang; Weaver, Jh
Metal/GaP(110) Interface Formation: Ti, Pd, Ag, and Au Adatom Deposition 1-gen-1989 Trafas, Bm; Xu, Fang; Vos, M; Aldao, Cm; Weaver, Jh
Activated Metal Deposition and Oxide Growth on Semiconductors: TiO2/Si(111)-2x1 1-gen-1989 Xu, Fang; Hill, Dm; Benning, Pj; Weaver, Jh
Cr, Co, Pd, Au, and In Overlayers on PbS (100): Adatom Interaction and Interface Formation 1-gen-1989 Trafas, Bm; Vitomirov, Im; Aldao, Cm; Gao, Y; Xu, Fang; Weaver, Jh; Partin, Dl
Angle resolved line shape study of the Al main L2MM Auger atomic peak 1-gen-1990 Bonanno, Assunta Carmela; Camarca, M; Xu, F.
Directional ejection of fast excited Si atoms during 10 Kev Ar+ ion bombardement. 1-gen-1990 Bonanno, Assunta Carmela; Xu, F; Camarca, M; Siciliano, R; Oliva, A.
Angle resolved Auger study of 10 KeV Ar + ion induced Si LMM atomic lines 1-gen-1990 Xu, F; Bonanno, Assunta Carmela; Camarca, M; Siciliano, R; Oliva, A.
Directional Ejection of Fast Excited Si Atoms During 10 keV Ar+ Ion Bombardment 1-gen-1990 Bonanno, A; Xu, Fang; Camarca, M; Siciliano, R; Oliva, A.
Mostrati risultati da 21 a 40 di 136
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