We consider a linear RLC network which contains a semiconductor device. In a multi-physics approach, the network is modeled by Modified Nodal Analysis, while a detailed drift-diffusion model is used for the semiconductor device. We discuss the coupling of the two models and address briefly the well-posedness of the resulting partial differential-algebraic equations, both for steady and transient drift-diffusion equations.
Multi-physics models in electric network design
ALI', Giuseppe;
2004-01-01
Abstract
We consider a linear RLC network which contains a semiconductor device. In a multi-physics approach, the network is modeled by Modified Nodal Analysis, while a detailed drift-diffusion model is used for the semiconductor device. We discuss the coupling of the two models and address briefly the well-posedness of the resulting partial differential-algebraic equations, both for steady and transient drift-diffusion equations.File in questo prodotto:
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