Threshold voltage (Vth) and drain-source current (IDS) behaviour of nitride read only memories (NROM) were studied both in situ during irradiation or after irradiation with photons and ions. Vth loss exhibits a variability well explained by the same Weibull statistics regardless of the irradiation species and total dose. Preliminary measurements of IDS in-situ during irradiation with photons show a step-like increase of the current with the total irradiation dose.

Ionizing radiation effects on NROM memory cells

PACE, Calogero;
2012-01-01

Abstract

Threshold voltage (Vth) and drain-source current (IDS) behaviour of nitride read only memories (NROM) were studied both in situ during irradiation or after irradiation with photons and ions. Vth loss exhibits a variability well explained by the same Weibull statistics regardless of the irradiation species and total dose. Preliminary measurements of IDS in-situ during irradiation with photons show a step-like increase of the current with the total irradiation dose.
2012
FLASH memories; NROM; ONO; radiation hardness
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11770/165540
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