Threshold voltage (Vth) and drain-source current (IDS) behaviour of nitride read only memories (NROM) were studied both in situ during irradiation or after irradiation with photons and ions. Vth loss exhibits a variability well explained by the same Weibull statistics regardless of the irradiation species and total dose. Preliminary measurements of IDS in-situ during irradiation with photons show a step-like increase of the current with the total irradiation dose.
Ionizing radiation effects on NROM memory cells
PACE, Calogero;
2012-01-01
Abstract
Threshold voltage (Vth) and drain-source current (IDS) behaviour of nitride read only memories (NROM) were studied both in situ during irradiation or after irradiation with photons and ions. Vth loss exhibits a variability well explained by the same Weibull statistics regardless of the irradiation species and total dose. Preliminary measurements of IDS in-situ during irradiation with photons show a step-like increase of the current with the total irradiation dose.File in questo prodotto:
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