Low frequency noise represents one of the most powerful tools to investigate the defect density and the conduction mechanisms in deeply scaled nanodevices such as MOSFETs. As the size of new generation devices shrinks towards the nanometric scale, the noise level can influence the correct operation of the circuits. In this paper, we illustrate the basic information needed to perform noise measurements, some references to the instrumentation involved and a few examples on how the noise investigation can be of help in the evaluation of the quality of innovative MOSFET gate stacks where high-k materials are implemented as gate dielectrics.
Electronic noise in deeply scaled nanodevices
PACE, Calogero
2012-01-01
Abstract
Low frequency noise represents one of the most powerful tools to investigate the defect density and the conduction mechanisms in deeply scaled nanodevices such as MOSFETs. As the size of new generation devices shrinks towards the nanometric scale, the noise level can influence the correct operation of the circuits. In this paper, we illustrate the basic information needed to perform noise measurements, some references to the instrumentation involved and a few examples on how the noise investigation can be of help in the evaluation of the quality of innovative MOSFET gate stacks where high-k materials are implemented as gate dielectrics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
