In this paper we present exact closures of the 8-moment and the 9-moment models for the charge transport in silicon semiconductors based on the maximum entropy principle. The validity of these models is assessed by numerical simulations of an n-(+)n-n(+) device. The results are compared with those obtained from the numerical solution of the Boltzmann Transport Equation both by Monte Carlo method and directly by a finite difference scheme.
Nonlinear models for silicon semiconductors
MASCALI, Giovanni;
2010-01-01
Abstract
In this paper we present exact closures of the 8-moment and the 9-moment models for the charge transport in silicon semiconductors based on the maximum entropy principle. The validity of these models is assessed by numerical simulations of an n-(+)n-n(+) device. The results are compared with those obtained from the numerical solution of the Boltzmann Transport Equation both by Monte Carlo method and directly by a finite difference scheme.File in questo prodotto:
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