A W-Band on-chip monopole antenna with SRR (Split Ring Resonator) and LBE (Localized Backside Etching) in a standard 0.13 μm BiCMOS process is presented. The AMC, composed by the SRR and the LBE, has been inserted in order to enhance the on-chip antenna gain by minimizing the losses of the substrate through the creation of constructive reflections. The enhancement of the gain has been fulfilled by etching the silicon substrate and thus reducing the losses. These etched parts are called Localized Backside Etching (LBE). Despite the other on-chip monopole antennas, the proposed element combines these two techniques to improve the radiation properties of monopole on-chip antenna. The proposed configuration provides a gain enhancement of 1 dB. The final AoC has a compact size of 1.11x1.28 mm2 and provide a peak gain of 2.29 dBi at 83 GHz.
W-Band On-chip Monopole Antenna in Standard 0.13 μm SiGe BiCMOS Technology
Mustacchio C.;Boccia L.;Arnieri E.;Amendola G.
2019-01-01
Abstract
A W-Band on-chip monopole antenna with SRR (Split Ring Resonator) and LBE (Localized Backside Etching) in a standard 0.13 μm BiCMOS process is presented. The AMC, composed by the SRR and the LBE, has been inserted in order to enhance the on-chip antenna gain by minimizing the losses of the substrate through the creation of constructive reflections. The enhancement of the gain has been fulfilled by etching the silicon substrate and thus reducing the losses. These etched parts are called Localized Backside Etching (LBE). Despite the other on-chip monopole antennas, the proposed element combines these two techniques to improve the radiation properties of monopole on-chip antenna. The proposed configuration provides a gain enhancement of 1 dB. The final AoC has a compact size of 1.11x1.28 mm2 and provide a peak gain of 2.29 dBi at 83 GHz.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
