Consistent hydrodynamical models for electron transport in semiconductors, free of any fitting parameter, have been formulated on the basis of the maximum entropy principle in Continuum Mech. Thermodyn., 11 (1999) 307, 12 (2000) 31 for silicon and in Continuant Mech. Thermodyn., 14 (2002) 405 for GaAs. In this paper we use the same approach for studying the hole transport in Si, by considering a parabolic approximation for the valence energy band. Scattering of holes with non-polar optical phonons, acoustic phonons and impurities have been taken into account. On the basis of these results, a limiting energy-transport model and an explicit expression for the low field hole mobility have been obtained. The high field mobility is also analyzed by taking into account the influence of impurities

MEP PARABOLIC HYDRODYNAMICAL MODEL FOR HOLES IN SILICON SEMICONDUCTORS

MASCALI, Giovanni;
2005-01-01

Abstract

Consistent hydrodynamical models for electron transport in semiconductors, free of any fitting parameter, have been formulated on the basis of the maximum entropy principle in Continuum Mech. Thermodyn., 11 (1999) 307, 12 (2000) 31 for silicon and in Continuant Mech. Thermodyn., 14 (2002) 405 for GaAs. In this paper we use the same approach for studying the hole transport in Si, by considering a parabolic approximation for the valence energy band. Scattering of holes with non-polar optical phonons, acoustic phonons and impurities have been taken into account. On the basis of these results, a limiting energy-transport model and an explicit expression for the low field hole mobility have been obtained. The high field mobility is also analyzed by taking into account the influence of impurities
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11770/123606
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 11
  • ???jsp.display-item.citation.isi??? 12
social impact