Consistent hydrodynamical models for electron transport in semiconductors, free of any fitting parameter, have been formulated on the basis of the maximum entropy principle in Continuum Mech. Thermodyn., 11 (1999) 307, 12 (2000) 31 for silicon and in Continuant Mech. Thermodyn., 14 (2002) 405 for GaAs. In this paper we use the same approach for studying the hole transport in Si, by considering a parabolic approximation for the valence energy band. Scattering of holes with non-polar optical phonons, acoustic phonons and impurities have been taken into account. On the basis of these results, a limiting energy-transport model and an explicit expression for the low field hole mobility have been obtained. The high field mobility is also analyzed by taking into account the influence of impurities
MEP PARABOLIC HYDRODYNAMICAL MODEL FOR HOLES IN SILICON SEMICONDUCTORS
MASCALI, Giovanni;
2005-01-01
Abstract
Consistent hydrodynamical models for electron transport in semiconductors, free of any fitting parameter, have been formulated on the basis of the maximum entropy principle in Continuum Mech. Thermodyn., 11 (1999) 307, 12 (2000) 31 for silicon and in Continuant Mech. Thermodyn., 14 (2002) 405 for GaAs. In this paper we use the same approach for studying the hole transport in Si, by considering a parabolic approximation for the valence energy band. Scattering of holes with non-polar optical phonons, acoustic phonons and impurities have been taken into account. On the basis of these results, a limiting energy-transport model and an explicit expression for the low field hole mobility have been obtained. The high field mobility is also analyzed by taking into account the influence of impuritiesI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
