This paper can be considered as the natural prosecution of Mascali and Romano (2009)[5]. Here, we describe the motion of holes in silicon by also taking into account the non-parabolicity of the heavy and light bands. The model is still based on the moment method and the closure of the system of equations is obtained by using the maximum entropy principle. Comparisons are made with the results in [5], in the case of bulk silicon, in order to establish the importance of non-parabolicity.

A HYDRODYNAMICAL MODEL FOR HOLE TRANSPORT IN SILICON SEMICONDUCTORS: THE CASE OF WARPED NON-PARABOLIC BANDS

MASCALI, Giovanni;
2011-01-01

Abstract

This paper can be considered as the natural prosecution of Mascali and Romano (2009)[5]. Here, we describe the motion of holes in silicon by also taking into account the non-parabolicity of the heavy and light bands. The model is still based on the moment method and the closure of the system of equations is obtained by using the maximum entropy principle. Comparisons are made with the results in [5], in the case of bulk silicon, in order to establish the importance of non-parabolicity.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11770/124045
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