Purpose - On the basis of the maximum entropy principle, seeks to fonnulate a hydrodynamical model for electron transport in GaAs semiconductors, which is free of any fitting parameter. Design/methodology/approach - The model considers the conduction band to be described by the Kane dispersion relation and includes both Gamma and L valleys. Takes into account electron-non-polar optical phonon, electronpolar optical phonon and electro-acoustic phonon scattering. Findings - The set of balance equation of the model forms a quasilinear hyperbolic system and for its numerical integration a recent high-order shock-capturing central differencing scheme has been employed. Originality/value - Presents the results of simulations of n(+) -n-n(+) GaAs diode and Gunn oscillator.

SIMULATION OF GUNN OSCILLATIONS WITH A NON-PARABOLIC HYDRODYNAMICAL MODEL BASED ON THE MAXIMUM ENTROPY PRINCIPLE

MASCALI, Giovanni;
2005-01-01

Abstract

Purpose - On the basis of the maximum entropy principle, seeks to fonnulate a hydrodynamical model for electron transport in GaAs semiconductors, which is free of any fitting parameter. Design/methodology/approach - The model considers the conduction band to be described by the Kane dispersion relation and includes both Gamma and L valleys. Takes into account electron-non-polar optical phonon, electronpolar optical phonon and electro-acoustic phonon scattering. Findings - The set of balance equation of the model forms a quasilinear hyperbolic system and for its numerical integration a recent high-order shock-capturing central differencing scheme has been employed. Originality/value - Presents the results of simulations of n(+) -n-n(+) GaAs diode and Gunn oscillator.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11770/129000
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