Purpose - On the basis of the maximum entropy principle, seeks to fonnulate a hydrodynamical model for electron transport in GaAs semiconductors, which is free of any fitting parameter. Design/methodology/approach - The model considers the conduction band to be described by the Kane dispersion relation and includes both Gamma and L valleys. Takes into account electron-non-polar optical phonon, electronpolar optical phonon and electro-acoustic phonon scattering. Findings - The set of balance equation of the model forms a quasilinear hyperbolic system and for its numerical integration a recent high-order shock-capturing central differencing scheme has been employed. Originality/value - Presents the results of simulations of n(+) -n-n(+) GaAs diode and Gunn oscillator.
SIMULATION OF GUNN OSCILLATIONS WITH A NON-PARABOLIC HYDRODYNAMICAL MODEL BASED ON THE MAXIMUM ENTROPY PRINCIPLE
MASCALI, Giovanni;
2005-01-01
Abstract
Purpose - On the basis of the maximum entropy principle, seeks to fonnulate a hydrodynamical model for electron transport in GaAs semiconductors, which is free of any fitting parameter. Design/methodology/approach - The model considers the conduction band to be described by the Kane dispersion relation and includes both Gamma and L valleys. Takes into account electron-non-polar optical phonon, electronpolar optical phonon and electro-acoustic phonon scattering. Findings - The set of balance equation of the model forms a quasilinear hyperbolic system and for its numerical integration a recent high-order shock-capturing central differencing scheme has been employed. Originality/value - Presents the results of simulations of n(+) -n-n(+) GaAs diode and Gunn oscillator.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
