We investigate the repolarization phenomenon in a ferroelectric film. Our ferroelectric samplewas lead zirconate titanate (PZT) obtained by sol-gel synthesis and deposited by spin coating on ITO/glasssubstrate. A series of repolarizations were induced in the ferroelectric film by applying a triangular waveand the current peaks related to the switchings of the ferroelectric domains were acquired for statisticalanalyses. It is shown that the dynamics and statistics of polarization switchings are well simulated by asimple mean-field model in which a double-well, asymmetric potential is included to describe the asymmetryat the PZT-ITO interface.

We investigate the repolarization phenomenon in a ferroelectric film. Our ferroelectric sample was lead zirconate titanate (PZT) obtained by sol-gel synthesis and deposited by spin coating on ITO/glass substrate. A series of repolarizations were induced in the ferroelectric film by applying a triangular wave and the current peaks related to the switchings of the ferroelectric domains were acquired for statistical analyses. It is shown that the dynamics and statistics of polarization switchings are well simulated by a simple mean-field model in which a double-well, asymmetric potential is included to describe the asymmetry at the PZT-ITO interface.

Stochastic ferroelectric switching of lead zirconate titanate thin films

LEPRETI, Fabio;CARBONE, Vincenzo;SCARAMUZZA, Nicola
2010

Abstract

We investigate the repolarization phenomenon in a ferroelectric film. Our ferroelectric sample was lead zirconate titanate (PZT) obtained by sol-gel synthesis and deposited by spin coating on ITO/glass substrate. A series of repolarizations were induced in the ferroelectric film by applying a triangular wave and the current peaks related to the switchings of the ferroelectric domains were acquired for statistical analyses. It is shown that the dynamics and statistics of polarization switchings are well simulated by a simple mean-field model in which a double-well, asymmetric potential is included to describe the asymmetry at the PZT-ITO interface.
We investigate the repolarization phenomenon in a ferroelectric film. Our ferroelectric samplewas lead zirconate titanate (PZT) obtained by sol-gel synthesis and deposited by spin coating on ITO/glasssubstrate. A series of repolarizations were induced in the ferroelectric film by applying a triangular waveand the current peaks related to the switchings of the ferroelectric domains were acquired for statisticalanalyses. It is shown that the dynamics and statistics of polarization switchings are well simulated by asimple mean-field model in which a double-well, asymmetric potential is included to describe the asymmetryat the PZT-ITO interface.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11770/131021
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