We report on experiments designed to observe the correlation between the autoionization of doubly excited helium atoms and the Auger decay of 2p vacancies in Al. The autoionizing states are formed when incident He+⁎ and He++ are neutralized by resonant electron capture at the surface. 2p excitation in Al occurs in dielectronic charge transfer during the close encounter of an excited helium ion and an Al atom. These results clarify the mechanism for Al-2p excitation in the case of singly charged ground state He+(1s) ion impact, where the dielectronic transition occurs after promotion of the 1s electron of incoming ions.
We report on experiments designed to observe the correlation between the autoionization of doubly excited helium atoms and the Auger decay of 2p vacancies in Al. The autoionizing states are formed when incident He+⁎ and He++ are neutralized by resonant electron capture at the surface. 2p excitation in Al occurs in dielectronic charge transfer during the close encounter of an excited helium ion and an Al atom. These results clarify the mechanism for Al-2p excitation in the case of singly charged ground state He+(1s) ion impact, where the dielectronic transition occurs after promotion of the 1s electron of incoming ions.
Local charge exchange of He+ ions at Aluminum surfaces
RICCARDI, Pierfrancesco
;SINDONA, Antonio;
2017-01-01
Abstract
We report on experiments designed to observe the correlation between the autoionization of doubly excited helium atoms and the Auger decay of 2p vacancies in Al. The autoionizing states are formed when incident He+⁎ and He++ are neutralized by resonant electron capture at the surface. 2p excitation in Al occurs in dielectronic charge transfer during the close encounter of an excited helium ion and an Al atom. These results clarify the mechanism for Al-2p excitation in the case of singly charged ground state He+(1s) ion impact, where the dielectronic transition occurs after promotion of the 1s electron of incoming ions.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
