An existence and uniqueness result for a two-temperature energy-transport model is proved, in the one-dimensional steady-state case, considering a bounded domain and physically appropriate boundary conditions. The model arises in the description of heat effects in semiconductors, the two temperatures account for the electron and the lattice temperature.
Existence and uniqueness for a two-temperature energy-transport model for semiconductors
ALI', Giuseppe;
2017-01-01
Abstract
An existence and uniqueness result for a two-temperature energy-transport model is proved, in the one-dimensional steady-state case, considering a bounded domain and physically appropriate boundary conditions. The model arises in the description of heat effects in semiconductors, the two temperatures account for the electron and the lattice temperature.File in questo prodotto:
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