We establish the global existence of smooth solutions of the Cauchy problem for the one-dimensional Euler--Poisson model for semiconductors, under the assumption that the initial data are perturbations of a stationary solution of the drift-diffusion equations. The resulting evolutionary solutions converge asymptotically in time to the unperturbed state.

Global Existence and Relaxation Limit for Smooth Solutions to the Euler-Poisson Model for Semiconductors

ALI', Giuseppe;
2000-01-01

Abstract

We establish the global existence of smooth solutions of the Cauchy problem for the one-dimensional Euler--Poisson model for semiconductors, under the assumption that the initial data are perturbations of a stationary solution of the drift-diffusion equations. The resulting evolutionary solutions converge asymptotically in time to the unperturbed state.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11770/137427
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