We have applied a double decoupled localized level Anderson–Newns Hamiltonian to the analysis of surface effectsupon the ionized fraction R+ of sputtered atoms from a metal surface. Electronic excitations, induced in the conduction band by the transient formation of quasi-molecular systems, between substrate and emitted atoms, in the collision cascade generated by the primary incident beam, have been explicitly included into an instantaneous transition matrix peaked at the Fermi level of the material. The interaction dynamics seem to take place over two different time scales, one related to sputtered atom trajectories and the other to recoiled substrate particles. Finite temperature calculations have suggested, at very low ejection energies, a power law dependence of the final charge state of thesputtered beam on its detected velocity. This result is in agreement, in the zero temperature limit, with some previouslypublished papers and its validity has been compared w...
Deep level promotion mechanism in sputtering
SINDONA, Antonio;FALCONE, Giovanni
1999-01-01
Abstract
We have applied a double decoupled localized level Anderson–Newns Hamiltonian to the analysis of surface effectsupon the ionized fraction R+ of sputtered atoms from a metal surface. Electronic excitations, induced in the conduction band by the transient formation of quasi-molecular systems, between substrate and emitted atoms, in the collision cascade generated by the primary incident beam, have been explicitly included into an instantaneous transition matrix peaked at the Fermi level of the material. The interaction dynamics seem to take place over two different time scales, one related to sputtered atom trajectories and the other to recoiled substrate particles. Finite temperature calculations have suggested, at very low ejection energies, a power law dependence of the final charge state of thesputtered beam on its detected velocity. This result is in agreement, in the zero temperature limit, with some previouslypublished papers and its validity has been compared w...I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.