Millimetric Mn-doped enstatite (MgSiO3) crystals have been grown by slow cooling in MoO3, V2O5, and Li2CO3 flux. Six starting mixture with different amount of manganese were slowly cooled from 1350 °C, 1050 °C and 950 °C down to 750 °C, 650 °C and 600 °C respectively. The enstatite crystals were characterized by X-ray powder diffraction (XRPD) and scanning electron microscopy with energy-dispersive spectrometry (SEM/EDS). Mn-doped enstatite crystals were reddish in color, euhedral and elongate parallel to c-axis. The largest enstatite crystal obtained is 8.5 mm in length. The effects of growth parameters on yield and size of crystals were studied. Variations observed in crystal size were attributed to the amount of Mn doping. Further characterizations by μ-Raman spectroscopy (μ-R) and cathodoluminescence (CL) allowed to study the effect of Mn doping on some chemical/physical characteristics of the enstatite and to assess its potential in advanced technological applications.
Effect of Mn doping on the growth and properties of enstatite single crystals
BLOISE, Andrea;MIRIELLO, DOMENICO;
2014-01-01
Abstract
Millimetric Mn-doped enstatite (MgSiO3) crystals have been grown by slow cooling in MoO3, V2O5, and Li2CO3 flux. Six starting mixture with different amount of manganese were slowly cooled from 1350 °C, 1050 °C and 950 °C down to 750 °C, 650 °C and 600 °C respectively. The enstatite crystals were characterized by X-ray powder diffraction (XRPD) and scanning electron microscopy with energy-dispersive spectrometry (SEM/EDS). Mn-doped enstatite crystals were reddish in color, euhedral and elongate parallel to c-axis. The largest enstatite crystal obtained is 8.5 mm in length. The effects of growth parameters on yield and size of crystals were studied. Variations observed in crystal size were attributed to the amount of Mn doping. Further characterizations by μ-Raman spectroscopy (μ-R) and cathodoluminescence (CL) allowed to study the effect of Mn doping on some chemical/physical characteristics of the enstatite and to assess its potential in advanced technological applications.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
