We present the first macroscopical model for charge transport in semiconductors,which makes use of analytic ellipsoidal approximations for the energy dispersionrelationships in the neighbors of the lowest minima of the conduction bands ofcompound semiconductors. The model considers the main scattering mechanisms inpolar semiconductors, that isthe acoustic, polar optical, intervalley non-polar optical phonon interactions and theionized impurity scattering.Simulations are shown for the cases of bulk 4H and 6H-SiC.

A HYDRODYNAMICAL MODEL FOR COVALENT SEMICONDUCTORS, WITH A GENERALIZED ENERGY DISPERSION RELATION

ALI', Giuseppe;MASCALI, Giovanni;
2014

Abstract

We present the first macroscopical model for charge transport in semiconductors,which makes use of analytic ellipsoidal approximations for the energy dispersionrelationships in the neighbors of the lowest minima of the conduction bands ofcompound semiconductors. The model considers the main scattering mechanisms inpolar semiconductors, that isthe acoustic, polar optical, intervalley non-polar optical phonon interactions and theionized impurity scattering.Simulations are shown for the cases of bulk 4H and 6H-SiC.
Compound Semiconductors; Hydrodynamical models; Maximum Entropy Principle
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.11770/138752
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