In this work, we present an experimental study on the single-electron effects observed at room temperature in silicon nanocrystal memories. The electrical characterization has been performed by means of a purposely designed low noise high bandwidth measurement system. Relevant statistical properties of the threshold voltage shifts induced by single-electron trapping and detrapping in the silicon dots are reported. The kinetics of electron capture and emission is also discussed

Room-temperature single-electron effects in Si nanocrystal memories

COCORULLO, Giuseppe;
2005-01-01

Abstract

In this work, we present an experimental study on the single-electron effects observed at room temperature in silicon nanocrystal memories. The electrical characterization has been performed by means of a purposely designed low noise high bandwidth measurement system. Relevant statistical properties of the threshold voltage shifts induced by single-electron trapping and detrapping in the silicon dots are reported. The kinetics of electron capture and emission is also discussed
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11770/151383
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