We present a macroscopic model for describing the electrical and thermal behaviour ofsilicon devices. The model makes use of a set of macroscopic state variables for phononsand electrons that are moments of their respective distribution functions. The evolutionequations for these variables are obtained starting from the Bloch–Boltzmann–Peierls kineticequations for the phonon and the electron distributions, and are closed by means of themaximum entropy principle. All the main interactions between electrons and phonons, thescattering of electrons with impurities, as well as the scattering of phonons among themselvesare considered. In particular, we propose a treatment of the optical phonon decay directlybased on the expression of its transition rate (Klemens 1966 Phys. Rev. 148 845; Aksamija& Ravaioli 2010 Appl. Phys. Lett. 96, 091911). As an application of the model, we evaluate the silicon thermopower.
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|Titolo:||A Hydrodynamic Model for Silicon Semiconductors Including Crystal Heating|
|Data di pubblicazione:||2015|
|Appare nelle tipologie:||1.1 Articolo in rivista|