In this study, the Al3+–Sn4+ substitution reaction in the AlN-doped SnO2 thin films is confirmed by photoluminescence and X-ray photoelectron spectrum analysis. Also, both Al3+–Sn4+ and N3––O2–substitution reactions are verified by computational simulation, Vienna ab initio simulation package (VASP). The computational simulation shows that both Al and N impurity dopants generate an unoccupied band at the upper valence band maximum, which produces holes within the upper valence band region. Both Al3+–Sn4+ ...
Experimental Observation and Computer Simulation of Al/Sn Substitution in p ‑ Type Aluminum Nitride-Doped Tin Oxide Thin Film
CARINI, Manuela;
2016-01-01
Abstract
In this study, the Al3+–Sn4+ substitution reaction in the AlN-doped SnO2 thin films is confirmed by photoluminescence and X-ray photoelectron spectrum analysis. Also, both Al3+–Sn4+ and N3––O2–substitution reactions are verified by computational simulation, Vienna ab initio simulation package (VASP). The computational simulation shows that both Al and N impurity dopants generate an unoccupied band at the upper valence band maximum, which produces holes within the upper valence band region. Both Al3+–Sn4+ ...File in questo prodotto:
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