NUMERICAL SIMULATION OF A DOUBLE-GATE MOSFET WITH A SUBBAND MODEL FOR SEMICONDUCTORS BASED ON THE MAXIMUM ENTROPY PRINCIPLE

A nanoscale double-gate MOSFET is simulated with an energy-transport subband model for semiconductors formulated starting from the moment system derived from the Schrödinger–Poisson–Boltzmann equations. The system is closed on the basis of the maximum entropy principle and includes scattering of electrons with acoustic and non-polar optical phonons. The proposed expression of the entropy combines quantum effects and semiclassical transport by weighting the contribution of each subband with the square modulus of the envelope functions arising from the Schrödinger–Poisson subsystem. The simulations show that the model is able to capture the relevant confining and transport features and assess the robustness of the numerical scheme