The interface trap density of fresh TiN/TaN gated HfO2/SiO 2/Si/epi-Ge pMOSFETs is measured using the DCIV technique. Its temperature dependence is also discussed here. We observe a polarity dependent DCIV peak shift. The bias temperature stress induced interface trapped charge and oxide trapped charge shifts are also systematically investigated in this work.
Characterization of interface and oxide traps in Ge pMOSFETs based on DCIV technique
CRUPI, Felice;PACE, Calogero;
2009-01-01
Abstract
The interface trap density of fresh TiN/TaN gated HfO2/SiO 2/Si/epi-Ge pMOSFETs is measured using the DCIV technique. Its temperature dependence is also discussed here. We observe a polarity dependent DCIV peak shift. The bias temperature stress induced interface trapped charge and oxide trapped charge shifts are also systematically investigated in this work.File in questo prodotto:
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