CRUPI, Felice

CRUPI, Felice  

Dipartimento di Ingegneria Informatica, Modellistica, Elettronica e Sistemistica  

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Risultati 1 - 20 di 241 (tempo di esecuzione: 0.024 secondi).
Titolo Data di pubblicazione Autore(i) File
A 0.05 mm², 350 mV, 14 nW Fully-Integrated Temperature Sensor in 180-nm CMOS 1-gen-2022 Zambrano, B.; Garzon, E.; Strangio, S.; Crupi, F.; Lanuzza, M.
A 0.25-V, 5.3-pW Voltage Reference with 25-μV/°C Temperature Coefficient, 140-μV/V Line Sensitivity and 2,200-μm2 Area in 180nm 1-gen-2020 Fassio, L.; Lin, L.; De Rose, R.; Lanuzza, M.; Crupi, F.; Alioto, M.
A 0.6-to-1.8V CMOS Current Reference with Near-100% Power Utilization 1-gen-2021 Fassio, L.; Lin, L.; De Rose, R.; Lanuzza, M.; Crupi, F.; Alioto, M.
1/f Noise in Drain and Gate Current of MOSFETs With High-k Gate Stacks 1-gen-2009 Magnone, P; Crupi, Felice; Giusi, G; Pace, Calogero; Simoen, E; Claeys, C; Pantisano, L; Maji, D; Rao, Vr; Srinivasan, P.
A 3.2-pW, 0.2-V Trimming-Less Voltage Reference with 1.4-mV Across-Wafer Total Accuracy 1-gen-2021 Fassio, L.; Lin, L.; De Rose, R.; Lanuzza, M.; Crupi, F.; Alioto, M.
A 2.6 nW, 0.45 V Temperature-Compensated Subthreshold CMOS Voltage Reference 1-gen-2011 Magnelli, L; Crupi, Felice; Corsonello, Pasquale; Pace, Calogero; Iannaccone, G.
A Backscattering Model Incorporating the Effective Carrier Temperature in Nano-MOSFET 1-gen-2011 Giusi, G; Iannaccone, G; Crupi, Felice; Ravaioli, U.
A comparative study of the oxide breakdown in short-channel nMOSFETs and pMOSFETs stressed in inversion and in accumulation regimes 1-gen-2003 Crupi, Felice; Kaczer, B; Degraeve, R; De Keersgieter, A; Groeseneken, G.
A Defect-Centric Analysis of the Temperature Dependence of the Channel Hot Carrier Degradation in nMOSFETs 1-gen-2016 Procel, Lm; Crupi, Felice; Trojman, L; Franco, J; Kaczer, B.
A Defect-Centric perspective on channel hot carrier variability in nMOSFETs 1-gen-2015 Procel, Lm; Crupi, Felice; Franco, J; Trojman, L; Kaczer, B; Wils, N; Tuinhout, H.
A detailed analysis of the pre-breakdown current fluctuations in thin oxide MOS capacitors 1-gen-1999 Neri, B; Crupi, Felice; Basso, G; Lombardo, S.
A Methodology to Account for the Finger Interruptions in Solar Cell Performance 1-gen-2012 De Rose, R; Malomo, A; Magnone, P; Crupi, Felice; Cellere, G; Martire, M; Tonini, D; Sangiorgi, E.
A Microscopically Accurate Model of Partially Ballistic NanoMOSFETs in Saturation Based on Channel Backscattering 1-gen-2011 Giusi, G; Iannaccone, G; Crupi, Felice
A model for current conduction after soft-breakdown 1-gen-1998 Nigam, T; Crupi, Felice; Degraeve, R; Heyns, M; Groeseneken, G; Maes, He
A new method for high-sensitivity noise measurements 1-gen-2002 Ciofi, C; Crupi, Felice; Pace, Calogero
A new physically-based model for temperature acceleration of time-to-breakdown 1-gen-1998 Pangon, N; Degraeve, R; Roussel, P; Groeseneken, G; Maes, He; Crupi, Felice
A new technique for extracting the MOSFET threshold voltage using noise measurements 1-gen-2004 Giusi, G; Donato, N; Ciofi, C; Crupi, Felice
A novel characterization tool for the study of dielectric breakdown of ultra-thin oxide MOS structures 1-gen-1999 Basso, G; Crupi, Felice; Neri, B; Giannetti, R; Lombardo, S.
A novel methodology for sensing the breakdown location and its application to the reliability study of ultrathin Hf-silicate gate dielectrics 1-gen-2005 Crupi, Felice; Kauerauf, T; Degraeve, R; Pantisano, L; Groeseneken, G.
A picopower temperature-compensated, subthreshold CMOS voltage reference 1-gen-2014 Albano, D; Crupi, Felice; Cucchi, F; Iannaccone, G.