IRIS

CRUPI, Felice

CRUPI, Felice  

Dipartimento di Ingegneria Informatica, Modellistica, Elettronica e Sistemistica  

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Risultati 1 - 20 di 257 (tempo di esecuzione: 0.027 secondi).
Titolo Data di pubblicazione Autore(i) File
1/f Noise in Drain and Gate Current of MOSFETs With High-k Gate Stacks 1-gen-2009 Magnone, P; Crupi, Felice; Giusi, G; Pace, Calogero; Simoen, E; Claeys, C; Pantisano, L; Maji, D; Rao, Vr; Srinivasan, P.
A 0.05 mm², 350 mV, 14 nW Fully-Integrated Temperature Sensor in 180-nm CMOS 1-gen-2022 Zambrano, Benjamin; Garzon, Esteban; Strangio, S.; Crupi, F.; Lanuzza, M.
A 0.25-V, 5.3-pW Voltage Reference with 25-μV/°C Temperature Coefficient, 140-μV/V Line Sensitivity and 2,200-μm2 Area in 180nm 1-gen-2020 Fassio, L.; Lin, L.; De Rose, R.; Lanuzza, M.; Crupi, F.; Alioto, M.
A 0.6-to-1.8V CMOS Current Reference with Near-100% Power Utilization 1-gen-2021 Fassio, L.; Lin, L.; De Rose, R.; Lanuzza, M.; Crupi, F.; Alioto, M.
A 2.6 nW, 0.45 V Temperature-Compensated Subthreshold CMOS Voltage Reference 1-gen-2011 Magnelli, L; Crupi, Felice; Corsonello, Pasquale; Pace, Calogero; Iannaccone, G.
A 3.2-pW, 0.2-V Trimming-Less Voltage Reference with 1.4-mV Across-Wafer Total Accuracy 1-gen-2021 Fassio, L.; Lin, L.; De Rose, R.; Lanuzza, M.; Crupi, F.; Alioto, M.
A Backscattering Model Incorporating the Effective Carrier Temperature in Nano-MOSFET 1-gen-2011 Giusi, G; Iannaccone, G; Crupi, Felice; Ravaioli, U.
A Compact Model with Spin-Polarization Asymmetry for Nanoscaled Perpendicular MTJs 1-gen-2017 De Rose, Raffaele; Lanuzza, Marco; D'Aquino, Massimiliano; Carangelo, Greta; Finocchio, Giovanni; Crupi, Felice; Carpentieri, Mario
A comparative study of MWT architectures by means of numerical simulations 1-gen-2013 Magnone, P.; Tonini, D.; De Rose, R.; Frei, M.; Crupi, F.; Lanuzza, M.; Sangiorgi, E.; Fiegna, C.
A comparative study of the oxide breakdown in short-channel nMOSFETs and pMOSFETs stressed in inversion and in accumulation regimes 1-gen-2003 Crupi, Felice; Kaczer, B; Degraeve, R; De Keersgieter, A; Groeseneken, G.
A Defect-Centric Analysis of the Temperature Dependence of the Channel Hot Carrier Degradation in nMOSFETs 1-gen-2016 Procel, Lm; Crupi, Felice; Trojman, L; Franco, J; Kaczer, B.
A Defect-Centric perspective on channel hot carrier variability in nMOSFETs 1-gen-2015 Procel, Lm; Crupi, Felice; Franco, J; Trojman, L; Kaczer, B; Wils, N; Tuinhout, H.
A detailed analysis of the pre-breakdown current fluctuations in thin oxide MOS capacitors 1-gen-1999 Neri, B; Crupi, Felice; Basso, G; Lombardo, S.
A low-voltage, low-power reconfigurable current-mode softmax circuit for analog neural networks 1-gen-2021 Vatalaro, M.; Lanuzza, M.; Crupi, F.; Moposita, T.; Trojman, L.; Vladimirescu, A.; Strangio, S.
A Methodology to Account for the Finger Interruptions in Solar Cell Performance 1-gen-2012 De Rose, R; Malomo, A; Magnone, P; Crupi, Felice; Cellere, G; Martire, M; Tonini, D; Sangiorgi, E.
A methodology to account for the finger non-uniformity in photovoltaic solar cell 1-gen-2012 Magnone, P; Napoletano, A; DE ROSE, R; Crupi, Felice; Tonini, D; Cellere, G; Galiazzo, M; Sangiorgi, E; Fiegna, C.
A Microscopically Accurate Model of Partially Ballistic NanoMOSFETs in Saturation Based on Channel Backscattering 1-gen-2011 Giusi, G; Iannaccone, G; Crupi, Felice
A model for current conduction after soft-breakdown 1-gen-1998 Nigam, T; Crupi, Felice; Degraeve, R; Heyns, M; Groeseneken, G; Maes, He
A model for MOS gate stack quality evaluation based on the gate current 1/f noise 1-gen-2008 Magnone, P; Crupi, Felice; Iannaccone, G; Giusi, G; Pace, Calogero; Simoen, E; Claeys, C.
A new circuit topology for the realization of very low-noise wide-bandwidth transimpedance amplifier 1-gen-2007 Ciofi, C; Crupi, Felice; Pace, Calogero; Scandurra, G; Patane', M.