In this paper we present an on-wafer measurement system suited for the characterization of low frequency current noise in CMOS devices. Guidelines for designing the preamplifier and the bias stage at the drain and gate terminals are discussed. A simple implementation of the proposed design approach is reported. The system capability is tested through 1/f noise measurements in advanced CMOS devices
Instrumentation Design for Gate and Drain Low Frequency Noise Measurements
CRUPI, Felice;PACE, Calogero
2006-01-01
Abstract
In this paper we present an on-wafer measurement system suited for the characterization of low frequency current noise in CMOS devices. Guidelines for designing the preamplifier and the bias stage at the drain and gate terminals are discussed. A simple implementation of the proposed design approach is reported. The system capability is tested through 1/f noise measurements in advanced CMOS devicesFile in questo prodotto:
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