Repeater insertion is one of the most effective techniques to reduce the propagation delay related to long interconnects. However, its application to deep submicron technologies leads to sub-optimal results if the traditional sizing rules are followed. In the paper the Authors show the behaviour of deep-sub micron devices may differ significantly from the conventional one due to transistor parasitic capacitance. As a consequence, well-exploited assumption as linear relationship between channel width and output conductance of the CMOS gate start to fails, as well as it does optimisation techniques based upon them. A developed formula for buffer sizing is proposed based on a simplified model allowing MOS parasitic to be taken into account. Up to 50% area and leakage power saving can be obtained.

A Simple MOSFET Parasitic Capacitance Model and Its Application to Repeater Insertion Technique

CAPPUCCINO, Gregorio;Cocorullo G.
2006-01-01

Abstract

Repeater insertion is one of the most effective techniques to reduce the propagation delay related to long interconnects. However, its application to deep submicron technologies leads to sub-optimal results if the traditional sizing rules are followed. In the paper the Authors show the behaviour of deep-sub micron devices may differ significantly from the conventional one due to transistor parasitic capacitance. As a consequence, well-exploited assumption as linear relationship between channel width and output conductance of the CMOS gate start to fails, as well as it does optimisation techniques based upon them. A developed formula for buffer sizing is proposed based on a simplified model allowing MOS parasitic to be taken into account. Up to 50% area and leakage power saving can be obtained.
2006
978-3-540-39094-7
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11770/164969
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