In this paper, the influence of random process variations on different low leakage SRAM topologies has been analyzed. This analysis was performed through extensive Monte Carlo simulations and exploiting a commercial 65 nm technology. Simulation results demonstrate that the Low Vdd SRAM cell presents the best trade-off between performances and robustness against random process variations.

Impact of random process variations on different 65nm SRAM cell topologies

LANUZZA, Marco;CORSONELLO, Pasquale
2010-01-01

Abstract

In this paper, the influence of random process variations on different low leakage SRAM topologies has been analyzed. This analysis was performed through extensive Monte Carlo simulations and exploiting a commercial 65 nm technology. Simulation results demonstrate that the Low Vdd SRAM cell presents the best trade-off between performances and robustness against random process variations.
2010
978-076954246-1
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11770/165656
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 1
  • ???jsp.display-item.citation.isi??? ND
social impact