We have demonstrated for the first time synthesis of amorphous As–Se films within a large compositional range (AsxSe100-x (15 < x < 96)), even beyond the As–Se glass formation region, by means of PECVD. The ability to design the film composition, structure and optical properties via changing the type of plasma discharge and energy input as well as precursor's temperature is revealed. The results obtained evidence the enlarged capability of the PECVD method developed in terms of production of As–Se-based planar structures.
Design of composition, structure and optical properties of AsxSe100-x (15<96)films by plasma-enhanced chemical vapor deposition
De Filpo G.;
2019-01-01
Abstract
We have demonstrated for the first time synthesis of amorphous As–Se films within a large compositional range (AsxSe100-x (15 < x < 96)), even beyond the As–Se glass formation region, by means of PECVD. The ability to design the film composition, structure and optical properties via changing the type of plasma discharge and energy input as well as precursor's temperature is revealed. The results obtained evidence the enlarged capability of the PECVD method developed in terms of production of As–Se-based planar structures.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.