A new plasma-enhanced chemical vapor deposition-based (PECVD) approach for synthesizing of As-S films, with As content in the range 60–40 at.%, is demonstrated. The process has been carried out in a low-temperature Ar-plasma, employing for the first time volatile As and S as precursors. Utilization of inorganic elemental precursors, in contrast to the typically used in CVD metal-organic compounds or volatile hydrides/halides of Va- and VIa-group-elements, gives the possibility to reach the highest quality and purity of the As-S ≿halcogenide films. Quantum-chemical calculations have been performed to gain insight into the PECVD As-S chalcogenide films structure and the mechanism of its formation in the plasma discharge. An additional vibrational band near 650 cm−1 corresponding to cycled 2-dimensional units is observed by Raman spectroscopy. The process developed is cost-efficient one due to the very precise control and the long-term stability of the plasma parameters and it possesses a high potential for large-area applications such as fabrication of miniature integrated optical elements and 2D/3D printing of optical devices.
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|Titolo:||Structural and optical properties of arsenic sulfide films synthesized by a novel PECVD-based approach|
|Data di pubblicazione:||2017|
|Appare nelle tipologie:||1.1 Articolo in rivista|