Numerical modeling represent a powerful approach to investigate the physical loss mechanisms that limit the conversion efficiency of solar cells. In this paper, a comprehensive analysis of the different loss mechanisms affecting the performance of a conventional c-Si solar cell, such as optical losses, recombination losses and parasitic resistive losses, has been performed by means of numerical device simulations. Moreover, a detailed quantification of the impact of the different recombination mechanisms within the cell has been carried out through dark current-voltage simulations, both for a conventional c-Si solar cell and a high-efficiency selective emitter c-Si solar cell. © 2013 IEEE.

Loss analysis of silicon solar cells by means of numerical device simulation

De Rose R.
;
2013

Abstract

Numerical modeling represent a powerful approach to investigate the physical loss mechanisms that limit the conversion efficiency of solar cells. In this paper, a comprehensive analysis of the different loss mechanisms affecting the performance of a conventional c-Si solar cell, such as optical losses, recombination losses and parasitic resistive losses, has been performed by means of numerical device simulations. Moreover, a detailed quantification of the impact of the different recombination mechanisms within the cell has been carried out through dark current-voltage simulations, both for a conventional c-Si solar cell and a high-efficiency selective emitter c-Si solar cell. © 2013 IEEE.
978-1-4673-4802-7
978-1-4673-4800-3
978-1-4673-4801-0
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11770/304036
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