Numerical modeling represent a powerful approach to investigate the physical loss mechanisms that limit the conversion efficiency of solar cells. In this paper, a comprehensive analysis of the different loss mechanisms affecting the performance of a conventional c-Si solar cell, such as optical losses, recombination losses and parasitic resistive losses, has been performed by means of numerical device simulations. Moreover, a detailed quantification of the impact of the different recombination mechanisms within the cell has been carried out through dark current-voltage simulations, both for a conventional c-Si solar cell and a high-efficiency selective emitter c-Si solar cell. © 2013 IEEE.
Scheda prodotto non validato
Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo
|Titolo:||Loss analysis of silicon solar cells by means of numerical device simulation|
DE ROSE, RAFFAELE (Corresponding)
|Data di pubblicazione:||2013|
|Appare nelle tipologie:||4.1 Contributo in Atti di convegno|