DE ROSE, Raffaele

DE ROSE, Raffaele  

Dipartimento di Ingegneria Informatica, Modellistica, Elettronica e Sistemistica  

Mostra records
Risultati 1 - 20 di 61 (tempo di esecuzione: 0.031 secondi).
Titolo Data di pubblicazione Autore(i) File
A 0.25-V, 5.3-pW Voltage Reference with 25-μV/°C Temperature Coefficient, 140-μV/V Line Sensitivity and 2,200-μm2 Area in 180nm 1-gen-2020 Fassio, L.; Lin, L.; De Rose, R.; Lanuzza, M.; Crupi, F.; Alioto, M.
A 0.6-to-1.8V CMOS Current Reference with Near-100% Power Utilization 1-gen-2021 Fassio, L.; Lin, L.; De Rose, R.; Lanuzza, M.; Crupi, F.; Alioto, M.
2-D numerical analysis of the impact of the highly-doped profile on selective emitter solar cell performance 1-gen-2011 De Rose, R.; Zanuccoli, M.; Magnone, P.; Tonini, D.; Galiazzo, M.; Cellere, G.; Frei, M.; Guo, H. -W.; Fiegna, C.; Sangiorgi, E.
A 3.2-pW, 0.2-V Trimming-Less Voltage Reference with 1.4-mV Across-Wafer Total Accuracy 1-gen-2021 Fassio, L.; Lin, L.; De Rose, R.; Lanuzza, M.; Crupi, F.; Alioto, M.
A Methodology to Account for the Finger Interruptions in Solar Cell Performance 1-gen-2012 De Rose, R; Malomo, A; Magnone, P; Crupi, Felice; Cellere, G; Martire, M; Tonini, D; Sangiorgi, E.
Adjusting thermal stability in double-barrier MTJ for energy improvement in cryogenic STT-MRAMs 1-gen-2022 Garzon, E.; De Rose, R.; Crupi, F.; Trojman, L.; Teman, A.; Lanuzza, M.
Assessment of 2D-FET Based Digital and Analog Circuits on Paper 1-gen-2021 Vatalaro, M.; De Rose, R.; Lanuzza, M.; Iannaccone, G.; Crupi, F.
Assessment of paper-based MoS2 FET for Physically Unclonable Functions 1-gen-2022 Vatalaro, M.; De Rose, R.; Lanuzza, M.; Magnone, P.; Conti, S.; Iannaccone, G.; Crupi, F.
Assessment of STT-MRAM performance at nanoscaled technology nodes using a device-to-memory simulation framework 1-gen-2019 Garzon, E.; De Rose, R.; Crupi, F.; Trojman, L.; Lanuzza, M.
Assessment of STT-MRAMs based on double-barrier MTJs for cache applications by means of a device-to-system level simulation framework 1-gen-2020 Garzon, E.; De Rose, R.; Crupi, F.; Trojman, L.; Finocchio, G.; Carpentieri, M.; Lanuzza, M.
A Compact Model with Spin-Polarization Asymmetry for Nanoscaled Perpendicular MTJs 1-gen-2017 De Rose, Raffaele; Lanuzza, Marco; D'Aquino, Massimiliano; Carangelo, Greta; Finocchio, Giovanni; Crupi, Felice; Carpentieri, Mario
Compact Modeling of Perpendicular STT-MTJs with Double Reference Layers 1-gen-2019 De Rose, R.; D'Aquino, M.; Finocchio, G.; Crupi, F.; Carpentieri, M.; Lanuzza, M.
Comparative analysis of yield optimized pulsed flip-flops 1-gen-2012 Lanuzza, Marco; De Rose, R.; Frustaci, F.; Perri, Stefania; Corsonello, Pasquale
A comparative study of MWT architectures by means of numerical simulations 1-gen-2013 Magnone, P.; Tonini, D.; De Rose, R.; Frei, M.; Crupi, F.; Lanuzza, M.; Sangiorgi, E.; Fiegna, C.
Design and evaluation of high-speed energy-aware carry skip adders 1-gen-2010 DE ROSE, R; Lanuzza, Marco; Frustaci, F.
Design guidelines for a metallization scheme with multiple-emitter contact lines in BC-BJ solar cells 1-gen-2016 Guevara, M; Procel, P; De Rose, R; Guerra, N; Crupi, Felice; Lanuzza, Marco
Design of a 3T current reference for low-voltage, low-power operation 1-gen-2018 De Rose, Raffaele; Crupi, Felice; Paliy, Maksym; Lanuzza, Marco; Iannaccone, Giuseppe
Design of a sub-1-V nanopower CMOS current reference 1-gen-2017 De Rose, Raffaele; Albano, Domenico; Crupi, Felice; Lanuzza, Marco
Design of Ultra-Low Voltage/Power Circuits and Systems 1-gen-2022 Lanuzza, M.; De Rose, R.; Strangio, S.
Designing Dynamic Carry Skip Adders: Analysis and Comparison 1-gen-2014 DE ROSE, R; Lanuzza, Marco; Frustaci, F; Purhoit, S.