Here, we demonstrate the tunability of the optical bandgap of graphene oxide (GO) and reduced graphene oxide (rGO) using an eco-friendly oxidation-reduction process. Based on UV-vis spectra and Tauc analysis, we observed a decrease in bandgap from 4.09 eV to 1.92 eV, effectively transforming GO from an insulating material to a semiconductor material. The transformation of GO into rGO is further characterized by FTIR, Raman, and TEM measurements. Additionally, electrical measurements showed that GO has a resistance of about 106, indicating its insulating nature. However, the reduction process significantly reduced the resistance of rGO to around 104, restoring its conductivity. Our results provide evidence for the potential use of GO and rGO in the semiconductor industry with tunable properties.
An eco-friendly bandgap engineering of semiconductor graphene oxide
Cruz Salazar Y.Membro del Collaboration Group
;Bellucci S.;Vacacela Gomez C.
;Scarcello A.;Straface S.;
2023-01-01
Abstract
Here, we demonstrate the tunability of the optical bandgap of graphene oxide (GO) and reduced graphene oxide (rGO) using an eco-friendly oxidation-reduction process. Based on UV-vis spectra and Tauc analysis, we observed a decrease in bandgap from 4.09 eV to 1.92 eV, effectively transforming GO from an insulating material to a semiconductor material. The transformation of GO into rGO is further characterized by FTIR, Raman, and TEM measurements. Additionally, electrical measurements showed that GO has a resistance of about 106, indicating its insulating nature. However, the reduction process significantly reduced the resistance of rGO to around 104, restoring its conductivity. Our results provide evidence for the potential use of GO and rGO in the semiconductor industry with tunable properties.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
