ACURIO MENDEZ, ELIANA MARIBEL
ACURIO MENDEZ, ELIANA MARIBEL
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Influence of GaN- and Si 3 N 4 -Passivation layers on the performance of AlGaN/GaN diodes with a gated edge termination
2019-01-01 Acurio, Eliana; Crupi, Felice; Ronchi, Nicolo; De Jaeger, Brice; Bakeroot, Benoit; Decoutere, Stefaan; Trojman, Lionel
Reliability improvements in AlGaN/GaN schottky barrier diodes with a gated edge termination
2018-01-01 ACURIO MENDEZ, ELIANA MARIBEL; Crupi, Felice; Ronchi, Nicolo; De Jaeger, Brice; Bakeroot, Benoit; Decoutere, Stefaan; Trojman, Lionel
Reliability in GaN-based devices for power applications
2018-01-01 Acurio, Eliana; Trojman, Lionel; Crupi, Felice; Iucolano, Ferdinando; Ronchi, Nicolo; De Jaeger, Brice; Bakeroot, Benoit; Decoutere, Stefaan
Titolo | Data di pubblicazione | Autore(i) | File |
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Influence of GaN- and Si 3 N 4 -Passivation layers on the performance of AlGaN/GaN diodes with a gated edge termination | 1-gen-2019 | Acurio, Eliana; Crupi, Felice; Ronchi, Nicolo; De Jaeger, Brice; Bakeroot, Benoit; Decoutere, Stefaan; Trojman, Lionel | |
Reliability improvements in AlGaN/GaN schottky barrier diodes with a gated edge termination | 1-gen-2018 | ACURIO MENDEZ, ELIANA MARIBEL; Crupi, Felice; Ronchi, Nicolo; De Jaeger, Brice; Bakeroot, Benoit; Decoutere, Stefaan; Trojman, Lionel | |
Reliability in GaN-based devices for power applications | 1-gen-2018 | Acurio, Eliana; Trojman, Lionel; Crupi, Felice; Iucolano, Ferdinando; Ronchi, Nicolo; De Jaeger, Brice; Bakeroot, Benoit; Decoutere, Stefaan |