A voltage reference circuit operating with all transistors biased in weak inversion, providing a mean reference voltage of 257.5 mV, has been fabricated in 0.18 mu m CMOS technology. The reference voltage can be approximated by the difference of transistor threshold voltages at room temperature. Accurate subthreshold design allows the circuit to work at room temperature with supply voltages down to 0.45 V and an average current consumption of 5.8 nA. Measurements performed over a set of 40 samples showed an average temperature coefficient of 165 ppm/degrees C with a standard deviation of 100 ppm/degrees C, in a temperature range from 0 to 125 degrees C. The mean line sensitivity is approximate to 0.44%/V, for supply voltages ranging from 0.45 to 1.8 V. The power supply rejection ratio measured at 30 Hz and simulated at 10 MHz is lower than -40 dB and -12 dB, respectively. The active area of the circuit is approximate to 0.043 mm^2.
A voltage reference circuit operating with all transistors biased in weak inversion, providing a mean reference voltage of 257.5 mV, has been fabricated in 0.18 mu m CMOS technology. The reference voltage can be approximated by the difference of transistor threshold voltages at room temperature. Accurate subthreshold design allows the circuit to work at room temperature with supply voltages down to 0.45 V and an average current consumption of 5.8 nA. Measurements performed over a set of 40 samples showed an average temperature coefficient of 165 ppm/degrees C with a standard deviation of 100 ppm/degrees C, in a temperature range from 0 to 125 degrees C. The mean line sensitivity is approximate to 0.44%/V, for supply voltages ranging from 0.45 to 1.8 V. The power supply rejection ratio measured at 30 Hz and simulated at 10 MHz is lower than -40 dB and -12 dB, respectively. The active area of the circuit is approximate to 0.043 mm(2).
A 2.6 nW, 0.45 V Temperature-Compensated Subthreshold CMOS Voltage Reference
CRUPI, Felice;CORSONELLO, Pasquale;PACE, Calogero;
2011-01-01
Abstract
A voltage reference circuit operating with all transistors biased in weak inversion, providing a mean reference voltage of 257.5 mV, has been fabricated in 0.18 mu m CMOS technology. The reference voltage can be approximated by the difference of transistor threshold voltages at room temperature. Accurate subthreshold design allows the circuit to work at room temperature with supply voltages down to 0.45 V and an average current consumption of 5.8 nA. Measurements performed over a set of 40 samples showed an average temperature coefficient of 165 ppm/degrees C with a standard deviation of 100 ppm/degrees C, in a temperature range from 0 to 125 degrees C. The mean line sensitivity is approximate to 0.44%/V, for supply voltages ranging from 0.45 to 1.8 V. The power supply rejection ratio measured at 30 Hz and simulated at 10 MHz is lower than -40 dB and -12 dB, respectively. The active area of the circuit is approximate to 0.043 mm^2.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
