In this work, we present an experimental study on the single-electron effects observed at room temperature in silicon nanocrystal memories. The electrical characterization has been performed by means of a purposely designed low noise high bandwidth measurement system. Relevant statistical properties of the threshold voltage shifts induced by single-electron trapping and detrapping in the silicon dots are reported. The kinetics of electron capture and emission is also discussed.
In this work, we present an experimental study on the single-electron effects observed at room temperature in silicon nanocrystal memories. The electrical characterization has been performed by means of a purposely designed low noise high bandwidth measurement system. Relevant statistical properties of the threshold voltage shifts induced by single-electron trapping and detrapping in the silicon dots are reported. The kinetics of electron capture and emission is also discussed. (C) 2005 American Institute of Physics.
Room-temperature single-electron effects in silicon nanocrystal memories / PACE C; CRUPI F.; LOMBARDO S.; GERARDI C.; COCORULLO G.. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 87:18(2005), pp. 182106.1-182106.3.
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Titolo: | Room-temperature single-electron effects in silicon nanocrystal memories |
Autori: | |
Data di pubblicazione: | 2005 |
Rivista: | |
Citazione: | Room-temperature single-electron effects in silicon nanocrystal memories / PACE C; CRUPI F.; LOMBARDO S.; GERARDI C.; COCORULLO G.. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 87:18(2005), pp. 182106.1-182106.3. |
Handle: | http://hdl.handle.net/20.500.11770/129958 |
Appare nelle tipologie: | 1.1 Articolo in rivista |