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EnglishThe impact of a submonolayer of HfO2 sandwiched between the SiON gate dielectric and the polycrystalline silicon layer on the low frequency noise of a n-channel metal oxide semiconductor field effect transistor is investigated. Fermi-level pinning at polycrystalline silicon-HfO2 interface acts as a dramatic source of the drain noise due to charge carrier number fluctuations, and of the gate noise due to work function fluctuations. These 1/f noise measurements are a strong indicator that the defects at the top HfO2/polycrystalline silicon interface, rather than bulk defects in the high-k layer, are responsible for the noise degradation observed in HfO2 gate dielectrics.
The impact of a submonolayer of HfO2 sandwiched between the SiON gate dielectric and the polycrystalline silicon layer on the low frequency noise of a n-channel metal oxide semiconductor field effect transistor is investigated. Fermi-level pinning at polycrystalline silicon-HfO2 interface acts as a dramatic source of the drain noise due to charge carrier number fluctuations, and of the gate noise due to work function fluctuations. These 1/f noise measurements are a strong indicator that the defects at the top HfO2/polycrystalline silicon interface, rather than bulk defects in the high-k layer, are responsible for the noise degradation observed in HfO2 gate dielectrics. (c) 2007 American Institute of Physics.
Fermi-level pinning at polycrystalline silicon-HfO2 interface as a source of drain and gate current 1/f noise / Magnone, P; Crupi, Felice; Pantisano, L; Pace, Calogero. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 90:7(2007), pp. 073507.1-073507.3.
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| Titolo: | Fermi-level pinning at polycrystalline silicon-HfO2 interface as a source of drain and gate current 1/f noise |
| Autori: | |
| Data di pubblicazione: | 2007 |
| Rivista: | |
| Citazione: | Fermi-level pinning at polycrystalline silicon-HfO2 interface as a source of drain and gate current 1/f noise / Magnone, P; Crupi, Felice; Pantisano, L; Pace, Calogero. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 90:7(2007), pp. 073507.1-073507.3. |
| Handle: | http://hdl.handle.net/20.500.11770/130663 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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