This letter studies the impact of defects close to the gate electrode side on low-frequency 1/f noise in the drain and gate current. Defects are selectively introduced by deposition of a submonolayer of HfO2 dielectric, which induce a large Fermi-level pinning on the gate. Contrary to the common belief that defects at the Si/SiO2 interface are the dominant effect on 1/f noise, defects at the interface and fluctuations in the poly-Si charge are also important.
This letter studies the impact of defects close to the gate electrode side on low-frequency 1/f noise in the drain and gate current. Defects are selectively introduced by deposition of a submonolayer of HfO2 dielectric, which induce a large Fermi-level pinning on the gate. Contrary to the common belief that defects at the Si/SiO2 interface are the dominant effect on 1/f noise, defects at the interface and fluctuations in the poly-Si charge are also important.
On the impact of defects close to the gate electrode on the low-frequency 1/f noise
CRUPI, Felice;PACE, Calogero;
2008-01-01
Abstract
This letter studies the impact of defects close to the gate electrode side on low-frequency 1/f noise in the drain and gate current. Defects are selectively introduced by deposition of a submonolayer of HfO2 dielectric, which induce a large Fermi-level pinning on the gate. Contrary to the common belief that defects at the Si/SiO2 interface are the dominant effect on 1/f noise, defects at the interface and fluctuations in the poly-Si charge are also important.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
