Low-frequency (1/f) noise behavior of locally stressed HfO2/TiN gate-stack pMOSFETs

The low-frequency noise behavior of locally strained pMOSFETs with a 7HfO(2)/TiN gate stack is reported. Different ways of compressive-strain engineering have been compared: a Si3N4 cap layer, SiGe source/drain (S/D) regions, or the combination of both. It is shown that the use of a cap layer does not degrade the 1/f noise magnitude, while an increase of this parameter is found for SiGe S/D devices. This increase is ascribed to the creation of additional traps in the high-k oxide by the SiGe S/D processing. The effect appears to be independent of the germanium content in the range studied (15%-25%). Another conclusion is that no direct correlation has been observed here between the applied stress and the noise magnitude.

Low-frequency (1/f) noise behavior of locally stressed HfO2/TiN gate-stack pMOSFETs / Giusi, G; Simoen, E; Eneman, G; Verheyen, P; Crupi, Felice; De Meyer, K; Claeys, C; Ciofi, C.. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - 27:6(2006), pp. 508-510.



Titolo: Low-frequency (1/f) noise behavior of locally stressed HfO2/TiN gate-stack pMOSFETs
Autori: 
CRUPI, Felice
mostra contributor esterni 
Data di pubblicazione: 2006
Rivista: 
IEEE ELECTRON DEVICE LETTERS  
Citazione: Low-frequency (1/f) noise behavior of locally stressed HfO2/TiN gate-stack pMOSFETs / Giusi, G; Simoen, E; Eneman, G; Verheyen, P; Crupi, Felice; De Meyer, K; Claeys, C; Ciofi, C.. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - 27:6(2006), pp. 508-510.
Handle: http://hdl.handle.net/20.500.11770/133293
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