The low-frequency noise behavior of locally strained pMOSFETs with a 7HfO(2)/TiN gate stack is reported. Different ways of compressive-strain engineering have been compared: a Si3N4 cap layer, SiGe source/drain (S/D) regions, or the combination of both. It is shown that the use of a cap layer does not degrade the 1/f noise magnitude, while an increase of this parameter is found for SiGe S/D devices. This increase is ascribed to the creation of additional traps in the high-k oxide by the SiGe S/D processing. The effect appears to be independent of the germanium content in the range studied (15%-25%). Another conclusion is that no direct correlation has been observed here between the applied stress and the noise magnitude.
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|Titolo:||Low-frequency (1/f) noise behavior of locally stressed HfO2/TiN gate-stack pMOSFETs|
|Data di pubblicazione:||2006|
|Appare nelle tipologie:||1.1 Articolo in rivista|