In this paper, complementary measurements of the drain and the gate low-frequency noise are used as a powerful probe for sensing the hafnium-related defects in nMOSFETs with high-k gate stacks and polysilicon gate electrode. Drain noise measurements indicate that for low hafnium content (23%) and thin high-k thickness (2 nm), the defect density at the substrate/dielectrics interface is similar to the case of conventional SiO2. Gate-noise measurements suggest that the defect density in the bulk of the high-k gate stacks and at the gate/dielectrics interface is strongly degraded by the hafnium content.

In this paper, complementary measurements of the drain and the gate low-frequency noise are used as a powerful probe for sensing the hafnium-related defects in nMOSFETs with high-k gate stacks and polysilicon gate electrode. Drain noise measurements indicate that for low hafnium content (23%) and thin high-k thickness (2 nm), the defect density at the substrate/dielectrics interface is similar to the case of conventional SiO2. Gate-noise measurements suggest that the defect density in the bulk of the high-k gate stacks and at the gate/dielectrics interface is strongly degraded by the hafnium content.

Comparative study of drain and gate low-frequency noise in nMOSFETs with hafnium-based gate dielectrics

CRUPI, Felice;PACE, Calogero;
2006

Abstract

In this paper, complementary measurements of the drain and the gate low-frequency noise are used as a powerful probe for sensing the hafnium-related defects in nMOSFETs with high-k gate stacks and polysilicon gate electrode. Drain noise measurements indicate that for low hafnium content (23%) and thin high-k thickness (2 nm), the defect density at the substrate/dielectrics interface is similar to the case of conventional SiO2. Gate-noise measurements suggest that the defect density in the bulk of the high-k gate stacks and at the gate/dielectrics interface is strongly degraded by the hafnium content.
In this paper, complementary measurements of the drain and the gate low-frequency noise are used as a powerful probe for sensing the hafnium-related defects in nMOSFETs with high-k gate stacks and polysilicon gate electrode. Drain noise measurements indicate that for low hafnium content (23%) and thin high-k thickness (2 nm), the defect density at the substrate/dielectrics interface is similar to the case of conventional SiO2. Gate-noise measurements suggest that the defect density in the bulk of the high-k gate stacks and at the gate/dielectrics interface is strongly degraded by the hafnium content.
CMOS reliability; High-k gate dielectrics; Low-frequency noise
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.11770/133294
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