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In this paper, complementary measurements of the drain and the gate low-frequency noise are used as a powerful probe for sensing the hafnium-related defects in nMOSFETs with high-k gate stacks and polysilicon gate electrode. Drain noise measurements indicate that for low hafnium content (23%) and thin high-k thickness (2 nm), the defect density at the substrate/dielectrics interface is similar to the case of conventional SiO2. Gate-noise measurements suggest that the defect density in the bulk of the high-k gate stacks and at the gate/dielectrics interface is strongly degraded by the hafnium content.

In this paper, complementary measurements of the drain and the gate low-frequency noise are used as a powerful probe for sensing the hafnium-related defects in nMOSFETs with high-k gate stacks and polysilicon gate electrode. Drain noise measurements indicate that for low hafnium content (23%) and thin high-k thickness (2 nm), the defect density at the substrate/dielectrics interface is similar to the case of conventional SiO2. Gate-noise measurements suggest that the defect density in the bulk of the high-k gate stacks and at the gate/dielectrics interface is strongly degraded by the hafnium content.

Comparative study of drain and gate low-frequency noise in nMOSFETs with hafnium-based gate dielectrics / Giusi, G; Crupi, Felice; Pace, Calogero; Ciofi, C; Groeseneken, G.. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 53:4(2006), pp. 823-828.

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