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EnglishIn this paper, complementary measurements of the drain and the gate low-frequency noise are used as a powerful probe for sensing the hafnium-related defects in nMOSFETs with high-k gate stacks and polysilicon gate electrode. Drain noise measurements indicate that for low hafnium content (23%) and thin high-k thickness (2 nm), the defect density at the substrate/dielectrics interface is similar to the case of conventional SiO2. Gate-noise measurements suggest that the defect density in the bulk of the high-k gate stacks and at the gate/dielectrics interface is strongly degraded by the hafnium content.
In this paper, complementary measurements of the drain and the gate low-frequency noise are used as a powerful probe for sensing the hafnium-related defects in nMOSFETs with high-k gate stacks and polysilicon gate electrode. Drain noise measurements indicate that for low hafnium content (23%) and thin high-k thickness (2 nm), the defect density at the substrate/dielectrics interface is similar to the case of conventional SiO2. Gate-noise measurements suggest that the defect density in the bulk of the high-k gate stacks and at the gate/dielectrics interface is strongly degraded by the hafnium content.
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| Titolo: | Comparative study of drain and gate low-frequency noise in nMOSFETs with hafnium-based gate dielectrics | |
| Autori: | ||
| Data di pubblicazione: | 2006 | |
| Rivista: | ||
| Handle: | http://hdl.handle.net/20.500.11770/133294 | |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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http://hdl.handle.net/20.500.11770/133294
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