In this paper, complementary measurements of the drain and the gate low-frequency noise are used as a powerful probe for sensing the hafnium-related defects in nMOSFETs with high-k gate stacks and polysilicon gate electrode. Drain noise measurements indicate that for low hafnium content (23%) and thin high-k thickness (2 nm), the defect density at the substrate/dielectrics interface is similar to the case of conventional SiO2. Gate-noise measurements suggest that the defect density in the bulk of the high-k gate stacks and at the gate/dielectrics interface is strongly degraded by the hafnium content.
In this paper, complementary measurements of the drain and the gate low-frequency noise are used as a powerful probe for sensing the hafnium-related defects in nMOSFETs with high-k gate stacks and polysilicon gate electrode. Drain noise measurements indicate that for low hafnium content (23%) and thin high-k thickness (2 nm), the defect density at the substrate/dielectrics interface is similar to the case of conventional SiO2. Gate-noise measurements suggest that the defect density in the bulk of the high-k gate stacks and at the gate/dielectrics interface is strongly degraded by the hafnium content.
Comparative study of drain and gate low-frequency noise in nMOSFETs with hafnium-based gate dielectrics / Giusi, G; Crupi, Felice; Pace, Calogero; Ciofi, C; Groeseneken, G.. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 53:4(2006), pp. 823-828.
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Titolo: | Comparative study of drain and gate low-frequency noise in nMOSFETs with hafnium-based gate dielectrics |
Autori: | |
Data di pubblicazione: | 2006 |
Rivista: | |
Citazione: | Comparative study of drain and gate low-frequency noise in nMOSFETs with hafnium-based gate dielectrics / Giusi, G; Crupi, Felice; Pace, Calogero; Ciofi, C; Groeseneken, G.. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 53:4(2006), pp. 823-828. |
Handle: | http://hdl.handle.net/20.500.11770/133294 |
Appare nelle tipologie: | 1.1 Articolo in rivista |