In this letter, we will show that the current through the oxide in MOS structures is not always characterized by full shot noise, as it is generally assumed. We will report different noise behaviors associated to different conduction mechanisms through the oxide and we will discuss a case where the noise characterization has been used as a powerful probe of the charge transport mechanism, thus resulting in the discrimination between the several proposed models.
In this letter, we will show that the current through the oxide in MOS structures is not always characterized by full shot noise, as it is generally assumed. We will report different noise behaviors associated to different conduction mechanisms through the oxide and we will discuss a case where the noise characterization has been used as a powerful probe of the charge transport mechanism, thus resulting in the discrimination between the several proposed models.
Noise as a probe of the charge transport mechanisms through thin oxides in mos structures
CRUPI, Felice;PACE, Calogero;
2001-01-01
Abstract
In this letter, we will show that the current through the oxide in MOS structures is not always characterized by full shot noise, as it is generally assumed. We will report different noise behaviors associated to different conduction mechanisms through the oxide and we will discuss a case where the noise characterization has been used as a powerful probe of the charge transport mechanism, thus resulting in the discrimination between the several proposed models.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
