Random telegraph signal after soft-breakdown is explained by the capture-emission of electrons in the same oxide traps of the soft-breakdown path. It is shown that not only the gate current noise, but also the substrate current noise largely increase at the soft-breakdown moment in n-channel metal-oxide-semiconductor field effect transistor (nMOSFET) stressed with positive gate polarity. A strong correlation of the noise in the gate and substrate current is reported.

Investigation and comparison of the noise in the gate and substrate current after soft-breakdown

CRUPI, Felice;
1999

Abstract

Random telegraph signal after soft-breakdown is explained by the capture-emission of electrons in the same oxide traps of the soft-breakdown path. It is shown that not only the gate current noise, but also the substrate current noise largely increase at the soft-breakdown moment in n-channel metal-oxide-semiconductor field effect transistor (nMOSFET) stressed with positive gate polarity. A strong correlation of the noise in the gate and substrate current is reported.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.11770/133298
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