This paper focuses on the noise behavior of nMOSFETs with high-k gate dielectrics (SiON/HfO2) with an equivalent oxide thickness of 0.92 nm and using metal (TiN/TaN) as gate material. From the linear dependence of the normalized drain noise on the gate voltage overdrive we conclude that the 1/f noise is dictated by mobility fluctuations. This behavior is mainly ascribed to the reduced mobility due to the low interfacial thickness of 0.4 nm and the Hf-related defects. The gate current is more sensitive to RTS noise with respect to the drain current noise. Cross-correlation measurements between drain and gate noise are used as a tool for discriminating between noise mechanisms which generate different fluctuation levels at the gate and drain terminal.

This paper focuses on the noise behavior of nMOSFETs with high-k gate dielectrics (SiON/HfO2) with an equivalent oxide thickness of 0.92 nm and using metal (TiN/TaN) as gate material. From the linear dependence of the normalized drain noise on the gate voltage overdrive we conclude that the 1/f noise is dictated by mobility fluctuations. This behavior is mainly ascribed to the reduced mobility due to the low interfacial thickness of 0.4 nm and the Hf-related defects. The gate current is more sensitive to RTS noise with respect to the drain current noise. Cross-correlation measurements between drain and gate noise are used as a tool for discriminating between noise mechanisms which generate different fluctuation levels at the gate and drain terminal. (C) 2006 Published by Elsevier Ltd.

Low frequency noise in nMOSFETs with subnanometer EOT hafnium-based gate dielectrics

PACE, Calogero;CRUPI, Felice;
2007

Abstract

This paper focuses on the noise behavior of nMOSFETs with high-k gate dielectrics (SiON/HfO2) with an equivalent oxide thickness of 0.92 nm and using metal (TiN/TaN) as gate material. From the linear dependence of the normalized drain noise on the gate voltage overdrive we conclude that the 1/f noise is dictated by mobility fluctuations. This behavior is mainly ascribed to the reduced mobility due to the low interfacial thickness of 0.4 nm and the Hf-related defects. The gate current is more sensitive to RTS noise with respect to the drain current noise. Cross-correlation measurements between drain and gate noise are used as a tool for discriminating between noise mechanisms which generate different fluctuation levels at the gate and drain terminal. (C) 2006 Published by Elsevier Ltd.
This paper focuses on the noise behavior of nMOSFETs with high-k gate dielectrics (SiON/HfO2) with an equivalent oxide thickness of 0.92 nm and using metal (TiN/TaN) as gate material. From the linear dependence of the normalized drain noise on the gate voltage overdrive we conclude that the 1/f noise is dictated by mobility fluctuations. This behavior is mainly ascribed to the reduced mobility due to the low interfacial thickness of 0.4 nm and the Hf-related defects. The gate current is more sensitive to RTS noise with respect to the drain current noise. Cross-correlation measurements between drain and gate noise are used as a tool for discriminating between noise mechanisms which generate different fluctuation levels at the gate and drain terminal.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11770/134370
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