In this work, the electrical properties of stressed NMOSFETs with different gate electrodes (Polysilicon and TiN) and HfSiON gate dielectric have been compared. The results show that TiN gated devices are less sensitive to electrical stress. The SPICE parameters of degraded and broken-down devices have been extracted to simulate the impact of wear-out and dielectric breakdown in the response of different current mirror configurations. The simulations show that the gate electrode and the circuit configuration have a strong influence on the response of broken down current mirrors.
Comparison of stressed Poly-Si and TiN gated Hf-based NMOSFETs characteristics, modeling and their impact on circuits performance
CRUPI, Felice;
2007-01-01
Abstract
In this work, the electrical properties of stressed NMOSFETs with different gate electrodes (Polysilicon and TiN) and HfSiON gate dielectric have been compared. The results show that TiN gated devices are less sensitive to electrical stress. The SPICE parameters of degraded and broken-down devices have been extracted to simulate the impact of wear-out and dielectric breakdown in the response of different current mirror configurations. The simulations show that the gate electrode and the circuit configuration have a strong influence on the response of broken down current mirrors.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
