We show that the tunneling current of a metal-oxide-semiconductor capacitor subjected to voltage stress exhibits suppressed shot noise with respect to the "full" shot noise level associated with the same current before stress. We provide experimental results exhibiting a suppression down to about 70% and a theoretical model for transport and noise in the stress induced leakage current regime based on trap assisted tunneling, which is able to reproduce such reduction. Numerical results from the model are compared with measurements. (C) 2000 American Institute of Physics. [S0003-6951(00)03044-8].
Suppressed shot noise in trap-assisted tunneling of metal-oxide-semiconductor capacitors
CRUPI, Felice;
2000-01-01
Abstract
We show that the tunneling current of a metal-oxide-semiconductor capacitor subjected to voltage stress exhibits suppressed shot noise with respect to the "full" shot noise level associated with the same current before stress. We provide experimental results exhibiting a suppression down to about 70% and a theoretical model for transport and noise in the stress induced leakage current regime based on trap assisted tunneling, which is able to reproduce such reduction. Numerical results from the model are compared with measurements. (C) 2000 American Institute of Physics. [S0003-6951(00)03044-8].File in questo prodotto:
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