A microscopic picture for the progressive leakage current growth in electrically stressed Hf(x)Si(1-x)ON/SiON gate stacks in metal-oxide-semiconductor transistors based on the physics of mesoscopic conductors is proposed. The breakdown spot is modeled as a nanoconstriction connecting two electron reservoirs. We show that after eliminating the tunneling current component that flows through the nondamaged device area, the postbreakdown conductance exhibits levels of the order of the quantum unit 2e(2)/h, where e is the electron charge and h the Planck's constant, as is expected for atomic-sized contacts. Similarities and differences with previous studied systems are discussed. (c) 2008 American Institute of Physics.
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|Titolo:||Electron transport through electrically induced nanoconstrictions in HfSiON gate stacks|
|Data di pubblicazione:||2008|
|Citazione:||Electron transport through electrically induced nanoconstrictions in HfSiON gate stacks / Miranda, E; Falbo, P; Nafria, M; Crupi, Felice. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 92:25(2008).|
|Appare nelle tipologie:||1.1 Articolo in rivista|