Modeling pFET currents after soft breakdown at different gate locations

pMOSFET currents after soft gate oxide breakdown are studied as a function of the breakdown position. The analysis draws on analogies with post-soft breakdown processes in a nMOSFET. The pMOSFET breakdown path is modeled as a narrow region of SiO2 with lower electron and hole barriers. MEDICI simulations of a pMOSFET after soft breakdown assuming preferential electron conduction through the breakdown path consistently explain the presented experimental data for both gate-to-substrate and gate-to-extension breakdowns. (C) 2004 Elsevier B.V. All rights reserved.